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These N-Channel enhancement mode power field effect transistors are produced proprietary,planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. Maximum Continuous Drain Current:50A Maximum Drain Source Voltage:60V Maximum Drain Source Resistance:21 mΩ Minimum Gate Threshold Voltage:1V Maximum Gate Source Voltage:-20 V, +20 V Maximum Power Dissipation:121 W Minimum Operating Temperature:-55 °C Maximum Operating Temperature:+175 °C Package include: 10pcs*FQP50N06
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