XY-GMOS High Power MOS Tube FET Trigger Switch Driver Module PWM Conditioning Electronic Switch Control Board DC 4V-60V

Descripción

Product description We delivering products that are designed to elevate your projects to the next level. Whether you are a hardware engineer,hobbyist, student, or professional.Our development boards and components are here to help. Welcome to JESSINIE, for development boards and electronic components. At JESSINIE, we providing a wide range of development board modules, displays, sensors, electronics, power accessories, and DIP sockets to meet your project needs. At JESSINIE, We focus on the importance of reliable and efficient products, we prioritize quality and performance in everything we offer. Choose JESSINIE for your development board and electronic components needs. Thank you for choosing JESSINIE. Product parameters and application: 1. Working voltage: DC 4V-60V;2. Trigger signal source: High level trigger (DC3.0V-24V), low level trigger (DC 0.0V-0.6V), switching value control, can be connected to microcontroller IO port, PLC interface, DC power supply, etc., can be connected to PWM signal, signal frequency 0-2.5KHZ support. 3.Output capacity: DC 4V-60V, continuous current 10A at room temperature, power 600W! Under auxiliary heat dissipation conditions, the current can reach 15A.4.Application: The output terminal can control high-power equipment, motors, bulbs, LED light strips, DC motors, micro water pumps, solenoid valves, etc. It can input PWM to control motor speed, lamp brightness, etc.5: Service life: unlimited switching times; Working temperature: - 40-85 ℃; Size: 4.6 * 2.9 * 1.5cm

Características

• This module supports high-level triggering, low-level triggering, switching control, and PWM control;
• The original imported dual MOS parallel active output is used, with lower internal resistance, greater current, and strong power. It is 10A and 600W at room temperature, meeting the use of most equipment;
• Support ultra wide voltage: DC 4V~60V; Easily achieve control of high-power devices.
• Low-level trigger voltage range: DC 0V-0.6V, trigger signal at 0V-0.6V, MOS transistor is on; above 3.0V, MOS transistor is off; signal voltage cannot be 0.6V-3.0V, because MOS tube is not complete Open circuit, high power output will damage MOS.
• High level trigger voltage range: DC3.0V~24V, that is, when the signal is 3.0V~24V, the MOS transistor is on; If it is lower than 0.6V, that is, 0V~0.6V, the MOS tube is turned off, and the signal voltage must not be between 0.6V and 3.0V. In this way, the MOS is in an incomplete open state, and the MOS is burned during high-power use;

Especificaciones