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Product Description:Experience high-performance power transistors with our TO-220-3L Plastic-Encapsulate Transistors. Designed for medium power applications, these Darlington transistors come in both NPN (TIP120, TIP121, TIP122) and PNP (TIP125, TIP126, TIP127) configurations, ensuring compatibility for a wide range of electronic projects.Key Features:- Collector-Base Voltage (VCBO): 60V, 80V, 100V- Collector-Emitter Voltage (VCEO): 60V, 80V, 100V- Emitter-Base Voltage (VEBO): 5V- Continuous Collector Current (IC): Up to 5A- Collector Power Dissipation (PC): 2W- Thermal Resistance Junction to Ambient (RθJA): 62.5°C/W- Thermal Resistance Junction to Case (RθJc): 1.92°C/W- Junction Temperature (TJ): 150°C- Storage Temperature Range (Tstg): -55°C to +150°CElectrical Characteristics:- Collector-Base Breakdown Voltage (V(BR)CBO): 60V, 80V, 100V at IC=1mA, IE=0- Collector-Emitter Breakdown Voltage (VCEO(SUS)): 60V, 80V, 100V at IC=30mA, IB=0- Collector Cut-Off Current (ICBO): 0.2mA at VCB=60V, 80V, 100V- Emitter Cut-Off Current (IEBO): 2mA at VEB=5V, IC=0- DC Current Gain (hFE): 1000 at VCE=3V, IC=0.5A and IC=3A- Collector-Emitter Saturation Voltage (VCE(sat)): 2V at IC=3A, IB=12mA and 4V at IC=5A, IB=20mA- Base-Emitter Voltage (VBE): 2.5V at VCE=3V, IC=3A- Output Capacitance (Cob): 300pF for TIP125, TIP126, TIP127 and 200pF for TIP120, TIP121, TIP122 at VCB=10V, IE=0, f=0.1MHz
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